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| SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM4407GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM4407GM is supplied in a RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. -30V 14m -10.7A Pb-free; RoHS-compliant SO-8 D D D D G SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25C TC = 70C Pulsed drain current 1 Value -30 25 -10.7 -8.6 -50 2.5 0.02 Units V V A A A W W/C Total power dissipation, TC = 25C Linear derating factor TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 C C THERMAL CHARACTERISTICS Symbol RJA Parameter Maximum thermal resistance, junction-ambient 3 Value 50 Units C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board ; 125C/W when mounted on the minimum pad area required for soldering. 12/16/2005 Rev.3.01 www.SiliconStandard.com 1 of 5 SSM4407GM ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25C, unless otherwise specified) Test Conditions VGS=0V, ID=-250uA Reference to 25C, ID=-1mA VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A Min. -60 -1 Typ. -0.015 13 28 5.2 19.8 12 11 97 72 1960 590 465 Max. Units 14 25 -3 -1 -25 100 45 3200 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF BV DSS/Tj RDS(ON) Static drain-source on-resistance2 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Forward transconductance VDS=VGS, ID=-250uA VDS=-10V, ID=-10A Drain-source leakage current VDS=-30V, VGS=0V VDS=-24V ,VGS=0V, Tj = 70C VGS=25V ID=-10A VDS=-24V VGS=-10V VDS=-15V ID=-1A RG=6.8 , VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-source leakage current Total gate charge 2 Gate-source charge Gate-drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward voltage 2 Test Conditions IS=-2A, VGS=0V IS=-10A, VGS=0V, dI/dt=100A/s Min. - Typ. 36 34 Max. Units -1.2 V ns nC Reverse-recovery time Reverse-recovery charge Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 12/16/2005 Rev.3.01 www.SiliconStandard.com 2 of 5 SSM4407GM 40 42 T A =25 o C 36 -ID , Drain Current (A) 30 -ID , Drain Current (A) -10V -5.0V -4.5V -4.0V 36 T A =150 o C 32 28 -10V -5.0V -4.5V -4.0V 24 24 20 18 16 V G =-3.0V 12 12 V G =-3.0V 8 4 6 0 0 1 2 3 0 0 1 1 2 2 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 25 1.80 I D =-10A T A =25 o C Normalized RDS(ON) 20 1.60 I D =-10A V GS = -10V 1.40 RDS(ON) (m ) 1.20 15 1.00 0.80 10 0.60 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 3 100.00 10.00 2 -IS(A) 1.00 -VGS(th) (V) 1 0 1.3 1.5 -50 T j =150 o C T j =25 o C 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode 12/16/2005 Rev.3.01 Fig 6. Gate Threshold Voltage vs. Junction Temperature www.SiliconStandard.com 3 of 5 SSM4407GM f=1.0MH 14 10000 12 -VGS , Gate to Source Voltage (V) I D = -10A V DS = -24V Ciss 10 C (pF) 8 1000 6 Coss Crss 4 2 0 0 2 4 6 8 10 12 14 16 18 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 Normalized Thermal Response (Rthja) DUTY=0.5 0.2 0.1 0.1 1ms 1 0.05 -ID (A) 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.1 T A =25 o C Single Pulse 1s 10s DC 10 100 RJA = 125C/W 0.01 0.001 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform 12/16/2005 Rev.3.01 Fig 12. Gate Charge Waveform www.SiliconStandard.com 4 of 5 SSM4407GM PHYSICAL DIMENSIONS D SYMBOL A H E MIN 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 A1 B C D E e A C A1 e H L L 1.27(TYP) B All dimensions in millimeters. Dimensions do not include mold protrusions. PART MARKING PART NUMBER: 4407GM XXXXXX YWWSSS DATE/LOT CODE: (YWWSSS) Y = last digit of the year WW = week SSS = lot code sequence PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB). 12/16/2005 Rev.3.01 www.SiliconStandard.com 5 of 5 |
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